This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
As mentioned in a previous post, the Flemish Interuniversity Microelectronics Consortium, IMEC, has decided to include the interests of DRAM and non-volatile memory designers in their 32nm half-pitch ...
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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...
At the recent 2020 International Electron Devices Meeting (IEDM), Imec presented a paper on a novel capacitor-less DRAM cell architecture. DRAM is used for main memory in systems, and today’s most ...
Dynamic random access memory (DRAM) remains a cornerstone of modern electronic systems, enabling rapid data storage and retrieval. Recent developments have focused on capacitorless designs – notably ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
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