“Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new ...

Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current silicon-based technology. Electronic diodes require two types of ...

Electronics and Telecommunications Research Institute (ETRI) of Korea and its research team have successfully developed core material and device process technologies of gallium oxide (Ga2O3) power ...

Gallium oxide (Ga2O3) thin films have emerged as a material of significant interest owing to their ultrawide bandgap and robust chemical and thermal stability. These films offer promising avenues for ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has taken an equity position in Novel Crystal Technology, Inc., a Japanese company that develops and sells ...

A new study demonstrates a new, counterintuitive way to protect atomically-thin electronics -- adding vibrations, to reduce vibrations. By squeezing a liquid-metal gallium droplet, graphene devices ...

Shrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th century, it’s what powers nearly every modern electronic device.

Exposure to radiation and extreme temperature swings are two of the many hazards that space probes face. Now, KAUST researchers have created the world's first flash memory device made of gallium oxide ...

Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching ...