Enphase Energy and Infineon Announce World’s First 900 V GaN Bidirectional Switch Devices for AI Data Center Solid-State Transformers

Enphase has pioneered the system-level development and demonstration, building on more than 10 years of in-house research into GaN power conversion, with device technology and engineering expertise ...

Gallium Nitride (GaN) Power Device Market - Global Forecast 2026-2032 | AI Data Centers, EV Charging, and Renewable Energy Drive 25.20% CAGR Toward USD 2.27 Billion

Prioritize system-level ROI through energy savings, power density and lower TCO; accelerate adoption with reference designs, OEM partnerships, reliability validation and resilient sourcing.Dublin, Oct ...
Tech Times on MSN

Infineon wins EU funding for world's first 300mm GaN factory: Silicon cost parity ahead

GaN semiconductor manufacturing reaches a turning point as the European Commission clears 319 million euros for Infineon to ...
Yahoo Finance

Global GaN Power Device Market Report 2022 to 2027: Industry Trends, Share, Size, Growth, Opportunities and Forecasts

Global GaN Power Device Market Global GaN Power Device Market Dublin, Jan. 03, 2023 (GLOBE NEWSWIRE) -- The "GaN Power Device Market: Global Industry Trends, Share, Size, Growth, Opportunity and ...
Tech Times on MSN

GaN transistor simulation predicts 10,000x terahertz power at room temp

Terahertz transistor room temperature research reaches a new milestone: simulations of N-polar gallium nitride transistors ...
Electronic Design

Moving on to GaN Switches in Switch-Mode Power Supplies

GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...
Semiconductor Engineering

Going Vertical With GaN Devices

Gallium nitride has long been on the horizon for a variety of uses in semiconductors, but implementing this on a commercial scale has been relatively slow due to a variety of technical hurdles. That ...
Engineering

Si, SiC, and GaN for Power Devices, Part One: Electron Energy and the Semiconductors

Which semiconductor is the power powerhouse? In this four-part series, we’ll take an in-depth look at the differences between silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) to ...
EDN

Vertical GaN Devices: The Next Level of Power Electronics

NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...
Business Wire

Toyoda Gosei’s Quality GaN Substrate Technology Enhances Power Device Performance

KIYOSU, Japan--(BUSINESS WIRE)--Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An article confirming it was published in ...
MarketScreener

Enphase Energy, Inc. and Infineon Technologies Ag Announce 900 V Gan Bidirectional Switch Devices for Ai Data Center Solid-State Transformers

Enphase Energy Inc. and Infineon Technologies AG announced that Enphase will deploy the world?s first 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices, designed to operate in ...