A new technical paper titled “Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement ...
Neo Semiconductor X-HBM architecture will deliver 32K-bit wide data bus and potentially 512 Gbit per die density. It offering 16X more bandwidth or 10X higher density than traditional HBM. NEO ...
Hosted on MSN
3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
Scientists may have accidentally overcome a major barrier to smoothening the adoption of next-generation data-storage technologies. Using a unique material called indium selenide (In2Se3), researchers ...
On December 2, 2024, the Department of Commerce, Bureau of Industry and Security (BIS) issued a new set of regulations targeting semiconductors manufacturing equipment (SME) and high-bandwidth memory ...
Lam Research reported $3.87 billion in revenue last quarter, surpassing analyst expectations. Its strong operating margin of 29% and a return on equity of 45% indicate solid financial health. It will ...
PLAINVIEW, N.Y., Dec. 01, 2025 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (VECO) (NASDAQ: VECO) today announced that a leading semiconductor memory company has selected Veeco’s laser spike annealing ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results